B03 – Point defects in silicon carbide: Towards a platform for the coupling of light, spin and mechanics

Summary

Individual point defects in solids are stable quantum systems often providing coherent electron spins and stable emission of single photons. Point defects in silicon carbide combine these advantages with a technologically mature semiconductor material platform. However, the solid-state environment leads to significant spreads in the transition frequencies of individual defects which mostly hinders observing cooperative effects. In this project, we address this challenge theoretically as well as experimentally via modeling point defects and incorporating them into photonic and nanomechanical structures allowing to couple multiple defects combined with methods to individually tune the point defect’s transition frequency.

Project Leaders

Heiko B. Weber

Project leader B03

Friedrich-Alexander Universität Erlangen-Nürnberg

Staudtstraße 7
91058 Erlangen

Elke Neu-Ruffing

Project leader B03

Technische Universität Kaiserslautern

Erwin Schrödinger Strasse 46
67663 Kaiserslautern

Michel Bockstedte

Project leader B03

Johannes Kepler University Linz

Altenberger Straße 69
A-4040 Linz
Austria